吃瓜网

In this webinar we present the latest PVD technology solutions to deposit very thin highly doped layers of AlN.  We discuss how to control the critical aspects of doped AlN deposition, like the layer thickness uniformity, the crystallographic texture of the film, the control of mis-orientated grains and most importantly the control of the stress state of the film within the wafer.  We demonstrate outstanding within wafer stress performance and mis-orientated grain control for AlN layers with atomic Sc content up to 30%.